Veeco Instruments has announced that the University of Michigan has published a breakthrough study on atomic layer deposition ...

French MBE firm Riber has signed a three-year collaboration with the Novo Nordisk Foundation Quantum Computing Programme ...

The resulting submicron LEDs, some as small as 250nm by 250nm, initially demonstrated promising electrical characteristics, ...

Compound semiconductor wafer company IQE plc and Quinas Technology, a British semiconductor company, have completed a £1.1 ...

Photonics company Coherent has launched the SES18-880A-190-10, a high-power 880 nm single-emitter laser diode on sub mount, ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Key features of the QPA1722 include a frequency range of 17.7–20.2 GHz, 10W saturated output power (6W linear), 1 GHz ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

Compound Semiconductor™ is an Angel Business Communications publication.

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High Voltage Direct Current (HVDC) architecture, designed for megawatt-scale AI ...

Mitsubishi Electric has developed a compact 7GHz band GaN power amplifier module (PAM) for 5G-Advanced base station with what ...