We present a selectively grown AlGaInAs Multi-Quantum Well laser array on silicon covering a 155 nm range over the C+L band achieved by InP seed bonding and MOVPE Selective Area Growth.

In this paper, we present the development of a new 14nm SiGe process that is designed to improve with-in-wafer uniformity to eventually improve Electrical parameters, parametric limited yield and ...

The increasing demand for advanced thin-film composite (TFC) membranes stems from the limitations of current commercial membranes, particularly their vulnerability to biofouling. In this study, novel ...

During the past decade, hybrid inorganic–organic perovskites (HIOPs) and amorphous metal-oxide semiconductors (AMOSs) have attracted enormous interest in the construction of optoelectronic and ...