Low-temperature HCl-free selective silicon germanium epitaxial growth using low-pressure chemical vapor deposition was developed. By utilizing the incubation period of the poly-SiGe growth on SiO/sub ...

The first-in-human phase 1/2 study of TSN1611, a highly selective KRAS G12D inhibitor, in patients with advanced solid tumors.

Oveporexton (TAK-861) is a highly selective oral OX2R agonist that crosses the blood−brain barrier and has been shown to improve wakefulness in preclinical models 16,17 and in sleep-deprived ...

Abstract “After a short description of the evolution of metal-oxide-semiconductor device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the ...

Epitaxial growth refers to depositing a thin, crystal layer on a crystal substrate, with a specific orientation.

Phase engineering of nanomaterials (PEN) enables the preparation of metal nanomaterials with unconventional phases that are different from their thermodynamically stable counterparts. These ...

Investigating the resistance and capacitance induced by SiGe epitaxial growth based on varying epi thicknesses.

Emerging as the first asymmetric dual TrenchFET power MOSFET in a PowerPAIR 6 mm x 3.7 mm package using TrenchFET Gen III technology, the SiZ710DT combines a low- and high-side ...