Taipei, Taiwan – Researchers at United Microelectronics Corp. are exploring selective epitaxial growth as a complementary approach to tackling problems of gate leakage in transistors at ...

TAIPEI, Taiwan — Researchers at United Microelectronics Corp. are exploring selective epitaxial growth as a complementary approach to tackling problems of gate leakage in transistors at the sub-65nm ...

Here we demonstrate the epitaxial growth of group III – V semiconductor 3D nanostructured materials, including those containing light-emitting heterostructures, by selective area epitaxy (SAE ...