A research team in China has developed what claims is the fastest reported non-volatile semiconductor memory device to date, ...

To put this achievement into perspective, PoX can perform 25 billion operations per second – surpassing the previous world ...

Chinese scientists at Fudan University unveil Poxaio, the world’s fastest flash memory, capable of rewriting data in just 400 ...

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

a flash memory in which transistor dies are stacked vertically to increase storage density. Patent applications made public in late March include an improved stacking structure to resist potential ...

By devising a structure using 2D materials ... This speed limitation makes flash memory unsuitable for modern AI systems. Meanwhile, PoX is precisely tailored to meet the demands of high-speed ...

Chinese researchers from Fudan University have developed a prototype of a new generation of flash memory capable of recording data at a ...

Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented ...

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

In a study published in Science today, Mingsha Zhang, a neuroscientist at Beijing Normal University, focused on the thalamus.

Does this mid-range memory foam mattress strike the perfect balance between comfort and support? We tested it to see ...