Chinese researchers claim to have developed the fastest non volatile flash memory to date, but it needs a better name than ...

To put this achievement into perspective, PoX can perform 25 billion operations per second – surpassing the previous world ...

NOR flash memory wiring and structure on silicon (Credit: Cyferz, Wikimedia) To write a NOR Flash cell (set it to logical ‘0’), an elevated voltage is applied to the control gate, inducing HCI.

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

In conjunction with Flash memory, this is indeed an obstacle in achieving data integrity. File systems provide a file-based structure on top of the logical block address space and also implement ...

(1) For Adobe's multimedia authoring and playback system, see Flash. Flash memory turned out to be a bad naming choice, because people confuse flash memory (permanent storage) with regular memory ...

NAND Flash is named after the NAND (NOT-AND) logic gate, which is used in its basic architecture. The term "NAND" is derived from the way the memory cells are organized in a series-connected structure ...

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

Chinese researchers from Fudan University have developed a prototype of a new generation of flash memory capable of recording data at a ...

Chinese scientists at Fudan University unveil Poxaio, the world’s fastest flash memory, capable of rewriting data in just 400 ...

By devising a structure using 2D materials ... This speed limitation makes flash memory unsuitable for modern AI systems. Meanwhile, PoX is precisely tailored to meet the demands of high-speed ...