BILTHOVEN, Netherlands — ASM International N.V. here today announced that its epitaxial reactor line will support silicon germanium (SiGe) processes technologies for 300-mm wafer fabs. The company's U ...

The epitaxial service offers Si epitaxial and ultra-thin SiGe:Si composite layers on buried doped regions. We also provide comprehensive metrology services for our customers.

Epitaxial growth, essential for ... Such integrative approaches are proving critical for addressing the challenges posed by advanced materials like SiGe alloys and III–V semiconductors, ...

A high crystal quality of four-period stacked SiGe/Si multilayer epitaxial grown with the thickness of each SiGe layer less than 10 nm is realized on a Si substrate without any structural defect ...

Nature Materials – SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations Although several types of architecture combining memory cells ...

Crystal film growth: nanosheets extend epitaxial growth applications. ScienceDaily . Retrieved June 2, 2025 from www.sciencedaily.com / releases / 2013 / 12 / 131219154413.htm ...

Unique SiGe Growth Yields a Major Step to Using Silicon as a Photon Source. ... Tilted-view scanning electron micrograph of an array of epitaxial GaAs/Ge nanowires grown on a GaAs (111) ...