NOR flash memory wiring and structure on silicon (Credit: Cyferz, Wikimedia) To write a NOR Flash cell (set it to logical ‘0’), an elevated voltage is applied to the control gate, inducing HCI.

However, this block erasing is flash memory's peculiarity. Flash memory cells must be erased before they can be written to. Cells make up pages, and pages make up blocks, but while pages are ...

NAND Flash is named after the NAND (NOT-AND) logic gate, which is used in its basic architecture. The term "NAND" is derived from the way the memory cells are organized in a series-connected structure ...

With AI’s data boom, powerful memory is becoming all the more necessary for next-gen computing. It is 3D NAND that can ...

[Gene] has a project that writes a lot of settings to a PIC microcontroller’s Flash memory. Flash has limited read/erase cycles, and although the obvious problem ...

Yangtze Memory Technologies Co (YMTC), China’s leading flash memory chip manufacturer ... The chip features a dual-deck structure – a lower deck with 150 gates and an upper deck with 144 ...

One issue occurring at 3D flash memory production sites is the difficulty of inspecting and measuring the shapes of embedded metal structures and extremely deep holes known as “memory holes." The ...